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| PartNumber | NSVBC124XDXV6T1G | NSVBC124EDXV6T1G | NSVBC124EPDXV6T1G |
| Description | Bipolar Transistors - BJT SS SOT563 DUALL 22/ 47 | Bipolar Transistors - Pre-Biased SS SOT563 DUAL RSTR XSTR | Bipolar Transistors - Pre-Biased SS SOT563 DUAL RSTR XSTR |
| Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - Pre-Biased | Bipolar Transistors - Pre-Biased |
| RoHS | Y | Y | Y |
| Mounting Style | SMD/SMT | - | SMD/SMT |
| Package / Case | SOT-563-6 | - | SOT-563-6 |
| Transistor Polarity | NPN | - | NPN, PNP |
| Configuration | Dual | - | Dual |
| Collector Emitter Voltage VCEO Max | 50 V | - | 50 V |
| Collector Base Voltage VCBO | 50 V | - | - |
| Emitter Base Voltage VEBO | 6 V | - | - |
| Collector Emitter Saturation Voltage | 0.25 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Maximum Operating Temperature | + 150 C | - | + 150 C |
| Packaging | Reel | Reel | Reel |
| Brand | ON Semiconductor | ON Semiconductor | ON Semiconductor |
| Continuous Collector Current | 100 mA | - | 100 mA |
| DC Collector/Base Gain hfe Min | 80 | - | 100 |
| Pd Power Dissipation | 357 mW | - | 500 mW |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors - Pre-Biased | BJTs - Bipolar Transistors - Pre-Biased |
| Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Factory Pack Quantity | 4000 | 4000 | 4000 |
| Subcategory | Transistors | Transistors | Transistors |
| Series | - | NSBC124EDXV6 | NSBC124EPDXV6 |
| Typical Input Resistor | - | - | 22 kOhms |
| Typical Resistor Ratio | - | - | 1 |
| Output Voltage | - | - | 0.2 VDC |