NTD5413NT4G vs NTD5413N vs NTD5414N

 
PartNumberNTD5413NT4GNTD5413NNTD5414N
DescriptionMOSFET 30A, 60V, 26mOhms N-Channel
ManufacturerON SemiconductorONON
Product CategoryMOSFETFETs - SingleFETs - Single
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-252-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage60 V--
Id Continuous Drain Current30 A--
Rds On Drain Source Resistance18.5 mOhms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation68 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height2.38 mm--
Length6.73 mm--
Transistor Type1 N-Channel--
TypePower MOSFET--
Width6.22 mm--
BrandON Semiconductor--
Forward Transconductance Min36 S--
Fall Time8 ns--
Product TypeMOSFET--
Rise Time20 ns--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time28 ns--
Typical Turn On Delay Time11 ns--
Unit Weight0.139332 oz--
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