NVD6416ANLT4G vs NVD6416ANLT4G-001 vs NVD6416ANL

 
PartNumberNVD6416ANLT4GNVD6416ANLT4G-001NVD6416ANL
DescriptionMOSFET NFET DPAK 100V 19A 81MOHMMOSFET NFET DPAK 100V 19A 81MOHM
ManufacturerON SemiconductorON SemiconductorON Semiconductor
Product CategoryMOSFETMOSFETTransistors - FETs, MOSFETs - Single
RoHSY--
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseTO-252-3TO-252-3-
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current80 A--
Rds On Drain Source Resistance74 mOhms--
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 175 C-+ 175 C
Pd Power Dissipation71 W--
QualificationAEC-Q101--
SeriesNTD6416ANLNTD6416ANLNTD6416ANL
BrandON SemiconductorON Semiconductor-
Product TypeMOSFETMOSFET-
Factory Pack Quantity25002500-
SubcategoryMOSFETsMOSFETs-
Part # AliasesNVD6416ANLT4G-VF01NVD6416ANLT4G-001-VF01-
Unit Weight0.139332 oz0.011993 oz0.139332 oz
Packaging-ReelReel
Package Case--TO-252-3
Pd Power Dissipation--71 W
Id Continuous Drain Current--80 A
Vds Drain Source Breakdown Voltage--100 V
Rds On Drain Source Resistance--74 mOhms
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