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| PartNumber | NVMTS0D4N04CLTXG | NVMTS001N06CTXG | NVMTS001N06CLTXG |
| Description | MOSFET AFSM T6 40V LL NCH | MOSFET T6 60V SG PQFN8x8 EXPANSI | MOSFET T6 60V LL PQFN8*8 EXPANSI |
| Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | Power-88-8 | Power-88-8 | PQFN-88-8 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 40 V | 60 V | 60 V |
| Id Continuous Drain Current | 553.8 A | 376 A | 398.2 A |
| Rds On Drain Source Resistance | 400 uOhms | 910 uOhms | 810 uOhms |
| Vgs th Gate Source Threshold Voltage | 1 V | 2 V | 1.2 V |
| Vgs Gate Source Voltage | 20 V | 10 V | 10 V |
| Qg Gate Charge | 341 nC | 113 nC | 165 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
| Pd Power Dissipation | 244 W | 5 W, 244 W | 244 W |
| Configuration | Single | Single | Single Triple Source Quad Drain |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Packaging | Reel | Reel | Reel |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel Power MOSFET |
| Brand | ON Semiconductor | ON Semiconductor | ON Semiconductor |
| Forward Transconductance Min | 330 S | 160 S | 275 S |
| Fall Time | 107 ns | 14.5 ns | 23.3 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 147 ns | 21.4 ns | 25.2 ns |
| Factory Pack Quantity | 3000 | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 217 ns | 58.3 ns | 70.7 ns |
| Typical Turn On Delay Time | 110 ns | 27.4 ns | 47.2 ns |
| Technology | - | Si | Si |