NVTFS4C10NWFTAG vs NVTFS4C10NTAG vs NVTFS4C10N

 
PartNumberNVTFS4C10NWFTAGNVTFS4C10NTAGNVTFS4C10N
DescriptionMOSFET NFET U8FL 30V 47A 7.4MOHMMOSFET NFET U8FL 30V 44A 7.4MOHM
ManufacturerON SemiconductorON SemiconductorON Semiconductor
Product CategoryMOSFETMOSFETTransistors - FETs, MOSFETs - Single
RoHSYY-
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseWDFN-8WDFN-8-
Number of Channels1 Channel--
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage30 V30 V-
Id Continuous Drain Current47 A47 A-
Rds On Drain Source Resistance5.9 mOhms7.4 mOhms-
Vgs th Gate Source Threshold Voltage1.3 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge19.3 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation28 W--
ConfigurationSingle--
Channel ModeEnhancement--
QualificationAEC-Q101AEC-Q101-
PackagingReelReelReel
Transistor Type1 N-Channel--
BrandON SemiconductorON Semiconductor-
Forward Transconductance Min43 S--
Fall Time4 ns--
Product TypeMOSFETMOSFET-
Rise Time25 ns--
Factory Pack Quantity15001500-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time18 ns--
Typical Turn On Delay Time6 ns--
Unit Weight0.000600 oz--
Series-NVTFS4C10NNVTFS4C10N
Package Case--WDFN-8
Id Continuous Drain Current--47 A
Vds Drain Source Breakdown Voltage--30 V
Rds On Drain Source Resistance--7.4 mOhms
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