NX3008CBKS,115 vs NX3008CBKS vs NX3008CBKV

 
PartNumberNX3008CBKS,115NX3008CBKSNX3008CBKV
DescriptionMOSFET 30/30V, 350/200 MA N/P-CH TRENCH MOSFET
ManufacturerNexperiaNXPNXP Semiconductors
Product CategoryMOSFETFETs - ArraysFETs - Arrays
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTSSOP-6--
Number of Channels2 Channel--
Transistor PolarityN-Channel, P-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current350 mA, 200 mA--
Rds On Drain Source Resistance1.4 Ohms--
Vgs th Gate Source Threshold Voltage900 mV--
Qg Gate Charge520 pC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation990 mW--
ConfigurationDual--
Channel ModeEnhancement--
QualificationAEC-Q101--
PackagingReel-Digi-ReelR Alternate Packaging
Transistor Type1 N-Channel, 1 P-Channel--
BrandNexperia--
Fall Time38 ns--
Product TypeMOSFET--
Rise Time30 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time54 ns--
Typical Turn On Delay Time19 ns--
Unit Weight0.000265 oz--
Series--Automotive, AEC-Q101, TrenchMOS
Package Case--SOT-563, SOT-666
Operating Temperature---55°C ~ 150°C (TJ)
Mounting Type--Surface Mount
Supplier Device Package--SOT-666
FET Type--N and P-Channel
Power Max--500mW
Drain to Source Voltage Vdss--30V
Input Capacitance Ciss Vds--50pF @ 15V
FET Feature--Logic Level Gate
Current Continuous Drain Id 25°C--400mA, 220mA
Rds On Max Id Vgs--1.4 Ohm @ 350mA, 4.5V
Vgs th Max Id--1.1V @ 250μA
Gate Charge Qg Vgs--0.68nC @ 4.5V
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