OP506A vs OP506B vs OP506

 
PartNumberOP506AOP506BOP506
DescriptionPhototransistors PHOTOSENSORPhototransistors PHOTOSENSOR
ManufacturerTT ElectronicsTT ElectronicsOPTEK
Product CategoryPhototransistorsPhototransistorsIC Chips
RoHSYY-
ProductPhototransistorsPhototransistorsPhototransistors
Package / CaseT-1-2T-1-2-
Mounting StyleThrough HoleThrough HoleThrough Hole
Peak Wavelength935 nm935 nm-
Collector Emitter Voltage VCEO Max30 V30 V-
Collector Emitter Breakdown Voltage30 V30 V30 V
Collector Emitter Saturation Voltage0.4 V0.4 V0.4 V
Dark Current100 nA100 nA100 nA
Pd Power Dissipation100 mW100 mW-
Minimum Operating Temperature- 40 C- 40 C- 40 C
Maximum Operating Temperature+ 100 C+ 100 C+ 100 C
Height5.08 mm5.08 mm-
Lens Color/StyleBlueBlue-
PackagingBulkBulkBulk
TypeNPN Silicon PhototransistorNPN Silicon PhototransistorChip
Wavelength935 nm935 nm935nm
BrandOptek / TT ElectronicsOptek / TT Electronics-
Product TypePhototransistorsPhototransistors-
Factory Pack Quantity700700-
SubcategoryOptical Detectors and SensorsOptical Detectors and Sensors-
Maximum On State Collector Current-5.95 mA4.3 mA
Series--*
Package Case--T-1
Operating Temperature---40°C ~ 100°C (TA)
Mounting Type--Through Hole
Power Max--100mW
Current Collector Ic Max--5.95mA
Voltage Collector Emitter Breakdown Max--30V
Orientation--Top View
Current Dark Id Max--100nA
Viewing Angle---
Pd Power Dissipation--100 mW
Collector Emitter Voltage VCEO Max--30 V
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