 |  | | |
| PartNumber | PBHV2160ZX | PBHV2160Z | PBHV3160Z |
| Description | Bipolar Transistors - BJT 0.1A NPN High- Voltage Transistor | ||
| Manufacturer | Nexperia | NXP Semiconductors | NXP Semiconductors |
| Product Category | Bipolar Transistors - BJT | Transistors - Bipolar (BJT) - RF | Transistors - Bipolar (BJT) - RF |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SOT-223-3 | - | - |
| Transistor Polarity | NPN | NPN | - |
| Configuration | Single | Single | - |
| Collector Emitter Voltage VCEO Max | 600 V | - | - |
| Collector Base Voltage VCBO | 600 V | - | - |
| Emitter Base Voltage VEBO | 6 V | - | - |
| Collector Emitter Saturation Voltage | 65 mV | 65 mV | - |
| Maximum DC Collector Current | 100 mA | 100 mA | - |
| Gain Bandwidth Product fT | - | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| DC Current Gain hFE Max | 125 at 10 mA, 10 V | 125 at 10 mA 10 V | - |
| Packaging | Reel | Reel | Reel |
| Brand | Nexperia | - | - |
| Continuous Collector Current | 100 mA | 100 mA | - |
| DC Collector/Base Gain hfe Min | 70 at 10 mA, 10 V | - | - |
| Pd Power Dissipation | 1.4 W | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | Transistors | - | - |
| Unit Weight | 0.003951 oz | 0.006632 oz | - |
| Package Case | - | SOT-223-4 | - |
| Pd Power Dissipation | - | 1.4 W | - |
| Collector Emitter Voltage VCEO Max | - | 600 V | - |
| Collector Base Voltage VCBO | - | 600 V | - |
| Emitter Base Voltage VEBO | - | 6 V | - |
| DC Collector Base Gain hfe Min | - | 70 at 10 mA 10 V | - |