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| PartNumber | PBSS3515VS,115 | PBSS3515VS | PBSS3515VS , G5103T11UF |
| Description | Bipolar Transistors - BJT TRANS BISS TAPE-7 | ||
| Manufacturer | Nexperia | NXP | - |
| Product Category | Bipolar Transistors - BJT | Transistors (BJT) - Arrays | - |
| RoHS | Y | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SSmini-6 | - | - |
| Transistor Polarity | PNP | - | - |
| Configuration | Dual | - | - |
| Collector Emitter Voltage VCEO Max | 15 V | - | - |
| Collector Base Voltage VCBO | 15 V | - | - |
| Emitter Base Voltage VEBO | 6 V | - | - |
| Maximum DC Collector Current | 0.5 A | - | - |
| Gain Bandwidth Product fT | 280 MHz | - | - |
| Minimum Operating Temperature | - 65 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| DC Current Gain hFE Max | 200 at 10 mA, 2 V | - | - |
| Height | 0.6 mm | - | - |
| Length | 1.7 mm | - | - |
| Packaging | Reel | - | - |
| Width | 1.3 mm | - | - |
| Brand | Nexperia | - | - |
| DC Collector/Base Gain hfe Min | 200 at 10 mA, 2 V, 150 at 100 mA, 2 V, 90 at 500 mA, 2 V | - | - |
| Pd Power Dissipation | 200 mW | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Qualification | AEC-Q101 | - | - |
| Factory Pack Quantity | 4000 | - | - |
| Subcategory | Transistors | - | - |
| Part # Aliases | PBSS3515VS T/R | - | - |
| Unit Weight | 0.000099 oz | - | - |