PBSS4130PAN,115 vs PBSS4130PANP,115 vs PBSS4130PAN

 
PartNumberPBSS4130PAN,115PBSS4130PANP,115PBSS4130PAN
DescriptionBipolar Transistors - BJT 30V 1A NPN/NPN lo VCEsat transistorBipolar Transistors - BJT 30V 1A NPN/PNP lo VCEsat transistor
ManufacturerNexperiaNexperia-
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJT-
RoHSYY-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseDFN-2020-6DFN-2020-6-
Transistor PolarityNPNNPN, PNP-
ConfigurationDualDual-
Collector Emitter Voltage VCEO Max30 V30 V-
Collector Base Voltage VCBO30 V30 V-
Emitter Base Voltage VEBO7 V7 V-
Collector Emitter Saturation Voltage75 mV75 mV, - 85 mV-
Maximum DC Collector Current2 A2 A-
Gain Bandwidth Product fT165 MHz165 MHz, 125 MHz-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
DC Current Gain hFE Max370370, 350-
PackagingReelReel-
BrandNexperiaNexperia-
Continuous Collector Current1 A1 A-
DC Collector/Base Gain hfe Min240240, 250-
Pd Power Dissipation1450 mW1450 mW-
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
QualificationAEC-Q101AEC-Q101-
Factory Pack Quantity30003000-
SubcategoryTransistorsTransistors-
Unit Weight0.000250 oz0.000247 oz-
Top