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| PartNumber | PBSS4230PAN,115 | PBSS4230PAN | PBSS4230PANP |
| Description | Bipolar Transistors - BJT 30V 2A NPN/NPN lo VCEsat transistor | ||
| Manufacturer | Nexperia | - | - |
| Product Category | Bipolar Transistors - BJT | - | - |
| RoHS | Y | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | DFN-2020-6 | - | - |
| Transistor Polarity | NPN | - | - |
| Configuration | Dual | - | - |
| Collector Emitter Voltage VCEO Max | 30 V | - | - |
| Collector Base Voltage VCBO | 30 V | - | - |
| Emitter Base Voltage VEBO | 7 V | - | - |
| Collector Emitter Saturation Voltage | 60 mV | - | - |
| Maximum DC Collector Current | 3 A | - | - |
| Gain Bandwidth Product fT | 120 MHz | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| DC Current Gain hFE Max | 380 | - | - |
| Packaging | Reel | - | - |
| Brand | Nexperia | - | - |
| Continuous Collector Current | 2 A | - | - |
| DC Collector/Base Gain hfe Min | 250 | - | - |
| Pd Power Dissipation | 1450 mW | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Qualification | AEC-Q101 | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | Transistors | - | - |