PartNumber | PBSS4260PANP,115 | PBSS4260PANP | PBSS4260PANP , G577R9U |
Description | Bipolar Transistors - BJT 60V 2A NPN/PNP lo VCEsat transistor | ||
Manufacturer | Nexperia | - | - |
Product Category | Bipolar Transistors - BJT | - | - |
RoHS | Y | - | - |
Mounting Style | SMD/SMT | - | - |
Package / Case | DFN-2020-6 | - | - |
Transistor Polarity | NPN, PNP | - | - |
Configuration | Dual | - | - |
Collector Emitter Voltage VCEO Max | 60 V | - | - |
Collector Base Voltage VCBO | 60 V | - | - |
Emitter Base Voltage VEBO | 7 V | - | - |
Collector Emitter Saturation Voltage | 70 mV, - 100 mV | - | - |
Maximum DC Collector Current | 3 A | - | - |
Gain Bandwidth Product fT | 140 MHz, 100 MHz | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
DC Current Gain hFE Max | 430, 250 | - | - |
Packaging | Reel | - | - |
Brand | Nexperia | - | - |
Continuous Collector Current | 2 A | - | - |
DC Collector/Base Gain hfe Min | 290, 170 | - | - |
Pd Power Dissipation | 1450 mW | - | - |
Product Type | BJTs - Bipolar Transistors | - | - |
Qualification | AEC-Q101 | - | - |
Factory Pack Quantity | 3000 | - | - |
Subcategory | Transistors | - | - |
Unit Weight | 0.000254 oz | - | - |