PBSS4260PANP,115 vs PBSS4260PANP vs PBSS4260PANP , G577R9U

 
PartNumberPBSS4260PANP,115PBSS4260PANPPBSS4260PANP , G577R9U
DescriptionBipolar Transistors - BJT 60V 2A NPN/PNP lo VCEsat transistor
ManufacturerNexperia--
Product CategoryBipolar Transistors - BJT--
RoHSY--
Mounting StyleSMD/SMT--
Package / CaseDFN-2020-6--
Transistor PolarityNPN, PNP--
ConfigurationDual--
Collector Emitter Voltage VCEO Max60 V--
Collector Base Voltage VCBO60 V--
Emitter Base Voltage VEBO7 V--
Collector Emitter Saturation Voltage70 mV, - 100 mV--
Maximum DC Collector Current3 A--
Gain Bandwidth Product fT140 MHz, 100 MHz--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
DC Current Gain hFE Max430, 250--
PackagingReel--
BrandNexperia--
Continuous Collector Current2 A--
DC Collector/Base Gain hfe Min290, 170--
Pd Power Dissipation1450 mW--
Product TypeBJTs - Bipolar Transistors--
QualificationAEC-Q101--
Factory Pack Quantity3000--
SubcategoryTransistors--
Unit Weight0.000254 oz--
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