PD54003-E vs PD54003 vs PD54003L

 
PartNumberPD54003-EPD54003PD54003L
DescriptionRF MOSFET Transistors RF POWER transistor LDMOST family N-ChanRF MOSFET Transistors N-Ch 25 Volt 4 AmpRF MOSFET Transistors N-Ch 25 Volt 4 Amp
ManufacturerSTMicroelectronicsSTST
Product CategoryRF MOSFET TransistorsTransistors - FETs, MOSFETs - SingleRF FETs
RoHSY--
Transistor PolarityN-ChannelN-Channel-
TechnologySiSi-
Id Continuous Drain Current4 A--
Vds Drain Source Breakdown Voltage25 V--
Gain12 dB12 dB at 500 MHz-
Output Power3 W3 W-
Minimum Operating Temperature- 65 C- 65 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Mounting StyleSMD/SMTSMD/SMT-
Package / CasePowerSO-10RF-Formed-4--
PackagingTubeTube-
ConfigurationSingle--
Height3.5 mm--
Length7.5 mm--
Operating Frequency1 GHz1 GHz-
SeriesPD54003-EPD54003-E-
TypeRF Power MOSFETRF Power MOSFET-
Width9.4 mm--
BrandSTMicroelectronics--
Channel ModeEnhancement--
Moisture SensitiveYes--
Pd Power Dissipation52.8 W--
Product TypeRF MOSFET Transistors--
Factory Pack Quantity400--
SubcategoryMOSFETs--
Vgs Gate Source Voltage20 V--
Unit Weight0.105822 oz--
Package Case-PowerSO-10RF (Formed Lead)-
Pd Power Dissipation-52.8 W-
Vgs Gate Source Voltage-+/- 20 V-
Id Continuous Drain Current-4 A-
Vds Drain Source Breakdown Voltage-25 V-
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