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PHPT60606NYX vs PHPT60606PYX vs PHPT60606PY

 
PartNumberPHPT60606NYXPHPT60606PYXPHPT60606PY
DescriptionBipolar Transistors - BJT 60V 6A NPN high pwr bipolar transistorBipolar Transistors - BJT 60V 6A PNP high pwr bipolar transistor
ManufacturerNexperiaNexperiaNXP Semiconductors
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJTTransistors (BJT) - Single, Pre-Biased
RoHSYY-
Mounting StyleSMD/SMT--
Package / CaseLFPAK56-5LFPAK56-5-
Transistor PolarityNPN--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max60 V--
Collector Base Voltage VCBO60 V--
Emitter Base Voltage VEBO7 V--
Collector Emitter Saturation Voltage50 mV--
Maximum DC Collector Current14 A--
Gain Bandwidth Product fT180 MHz--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
PackagingReelReelDigi-ReelR Alternate Packaging
BrandNexperiaNexperia-
Continuous Collector Current6 A--
DC Collector/Base Gain hfe Min240 at 500 mA, 2 V--
Pd Power Dissipation1.35 W--
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
QualificationAEC-Q101AEC-Q101-
Factory Pack Quantity15001500-
SubcategoryTransistorsTransistors-
Part # AliasesPHPT60606NYX--
Unit Weight0.003136 oz--
Series---
Package Case--SC-100, SOT-669, 4-LFPAK
Mounting Type--Surface Mount
Supplier Device Package--LFPAK, Power-SO8
Power Max--1.35W
Transistor Type--PNP
Current Collector Ic Max--6A
Voltage Collector Emitter Breakdown Max--60V
DC Current Gain hFE Min Ic Vce--120 @ 500mA, 2V
Vce Saturation Max Ib Ic--525mV @ 600mA, 6A
Current Collector Cutoff Max--100nA
Frequency Transition--110MHz
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