 |  | | |
| PartNumber | PMDXB1200UPEZ | PMDXB1200UPE | PMDXB550UNE |
| Description | MOSFET 30V Dual P-Channel Trench MOSFET | ||
| Manufacturer | Nexperia | NXP Semiconductors | - |
| Product Category | MOSFET | FETs - Arrays | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Package / Case | DFN-1010B-6 | - | - |
| Packaging | Reel | Digi-ReelR Alternate Packaging | - |
| Brand | Nexperia | - | - |
| Product Type | MOSFET | - | - |
| Factory Pack Quantity | 5000 | - | - |
| Subcategory | MOSFETs | - | - |
| Series | - | - | - |
| Package Case | - | 6-XFDFN Exposed Pad | - |
| Operating Temperature | - | -55°C ~ 150°C (TJ) | - |
| Mounting Type | - | Surface Mount | - |
| Supplier Device Package | - | DFN1010B-6 | - |
| FET Type | - | 2 P-Channel (Dual) | - |
| Power Max | - | 285mW | - |
| Drain to Source Voltage Vdss | - | 30V | - |
| Input Capacitance Ciss Vds | - | 43.2pF @ 15V | - |
| FET Feature | - | Standard | - |
| Current Continuous Drain Id 25°C | - | 410mA | - |
| Rds On Max Id Vgs | - | 1.4 Ohm @ 410mA, 4.5V | - |
| Vgs th Max Id | - | 950mV @ 250μA | - |
| Gate Charge Qg Vgs | - | 1.2nC @ 4.5V | - |