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| PartNumber | PMZ1000UN,315 | PMZ1000UN | PMZ1200UPE |
| Description | MOSFET MOSFET N-CH | ||
| Manufacturer | Nexperia | - | NXP Semiconductors |
| Product Category | MOSFET | - | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | - | - |
| Technology | Si | - | Si |
| Mounting Style | SMD/SMT | - | SMD/SMT |
| Package / Case | DFN-1006-3 | - | - |
| Number of Channels | 1 Channel | - | 2 Channel |
| Transistor Polarity | N-Channel | - | N-Channel |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 480 mA | - | - |
| Rds On Drain Source Resistance | 1 Ohms | - | - |
| Configuration | Single | - | Dual |
| Packaging | Reel | - | Reel |
| Transistor Type | 1 N-Channel | - | 2 N-Channel |
| Brand | Nexperia | - | - |
| Product Type | MOSFET | - | - |
| Factory Pack Quantity | 10000 | - | - |
| Subcategory | MOSFETs | - | - |
| Unit Weight | 0.000028 oz | - | - |
| Package Case | - | - | DFN1010B-6 |
| Pd Power Dissipation | - | - | 4.03 W |
| Maximum Operating Temperature | - | - | + 150 C |
| Minimum Operating Temperature | - | - | - 55 C |
| Fall Time | - | - | 3 ns |
| Rise Time | - | - | 7 ns |
| Vgs Gate Source Voltage | - | - | +/- 8 V |
| Id Continuous Drain Current | - | - | 590 mA |
| Vds Drain Source Breakdown Voltage | - | - | 30 V |
| Vgs th Gate Source Threshold Voltage | - | - | 450 mV |
| Rds On Drain Source Resistance | - | - | 670 mOhms |
| Typical Turn Off Delay Time | - | - | 12 ns |
| Typical Turn On Delay Time | - | - | 4 ns |
| Qg Gate Charge | - | - | 1.05 mC |
| Forward Transconductance Min | - | - | 600 mS |
| Channel Mode | - | - | Enhancement |