PSMN1R1-30EL,127 vs PSMN1R1-30PL,127 vs PSMN1R1-30PL

 
PartNumberPSMN1R1-30EL,127PSMN1R1-30PL,127PSMN1R1-30PL
DescriptionMOSFET N-Ch 30V 1.3 mOhmsMOSFET N-Ch 30V 1.3 mOhms
ManufacturerNexperiaNexperia-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseI2PAK-3TO-220-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage30 V30 V-
Id Continuous Drain Current120 A120 A-
Rds On Drain Source Resistance1.3 mOhms1.3 mOhms-
Vgs th Gate Source Threshold Voltage1.7 V1.3 V-
Vgs Gate Source Voltage20 V10 V-
Qg Gate Charge243 nC243 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation338 W338 W-
ConfigurationSingleSingle-
PackagingTubeTube-
Transistor Type1 N-Channel1 N-Channel-
BrandNexperiaNexperia-
Product TypeMOSFETMOSFET-
Factory Pack Quantity5050-
SubcategoryMOSFETsMOSFETs-
Unit Weight0.084199 oz0.211644 oz-
Channel Mode-Enhancement-
Fall Time-115 ns-
Rise Time-213 ns-
Typical Turn Off Delay Time-199 ns-
Typical Turn On Delay Time-95 ns-
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