 |  |  | |
| PartNumber | PTVA035002EV-V1-R250 | PTVA035002EV-V1-R0 | PTVA035002EV |
| Description | RF MOSFET Transistors RF LDMOS FET | IC AMP RF LDMOS H-36275-4 | |
| Manufacturer | Cree, Inc. | - | - |
| Product Category | RF MOSFET Transistors | - | - |
| RoHS | Y | - | - |
| Transistor Polarity | Dual N-Channel | - | - |
| Technology | Si | - | - |
| Vds Drain Source Breakdown Voltage | 105 V | - | - |
| Rds On Drain Source Resistance | 100 mOhms | - | - |
| Gain | 18 dB | - | - |
| Output Power | 500 W | - | - |
| Maximum Operating Temperature | + 225 C | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | H-36275-4 | - | - |
| Packaging | Reel | - | - |
| Operating Frequency | 390 MHz to 450 MHz | - | - |
| Type | RF Power MOSFET | - | - |
| Brand | Wolfspeed / Cree | - | - |
| Number of Channels | 2 Channel | - | - |
| Product Type | RF MOSFET Transistors | - | - |
| Factory Pack Quantity | 250 | - | - |
| Subcategory | MOSFETs | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |