PartNumber | R6006ANX | R6006ANDTL | R6006AND |
Description | MOSFET 10V DRIVE NCH MOSFET | MOSFET LO CURR HI EFF MOSFT HI BREAKDWN RESIST | |
Manufacturer | ROHM Semiconductor | ROHM Semiconductor | - |
Product Category | MOSFET | MOSFET | - |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Mounting Style | Through Hole | SMD/SMT | - |
Package / Case | TO-220FP-3 | TO-252-3 | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 600 V | 600 V | - |
Id Continuous Drain Current | 6 A | 6 A | - |
Rds On Drain Source Resistance | 1.2 Ohms | 900 mOhms | - |
Vgs Gate Source Voltage | 30 V | 30 V | - |
Qg Gate Charge | 15 nC | 15 nC | - |
Pd Power Dissipation | 40 W | 40 W | - |
Configuration | Single | Single | - |
Packaging | Bulk | Reel | - |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Brand | ROHM Semiconductor | ROHM Semiconductor | - |
Forward Transconductance Min | 1.7 S | 1.7 S | - |
Fall Time | 35 ns | 35 ns | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 18 ns | 36 ns | - |
Factory Pack Quantity | 500 | 2500 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 50 ns | 50 ns | - |
Typical Turn On Delay Time | 22 ns | 22 ns | - |
Part # Aliases | R6006ANX | R6006AND | - |
Unit Weight | 0.211644 oz | 0.011993 oz | - |
Vgs th Gate Source Threshold Voltage | - | 2.5 V | - |
Minimum Operating Temperature | - | - 55 C | - |
Maximum Operating Temperature | - | + 150 C | - |
Channel Mode | - | Enhancement | - |