R6009ENJTL vs R6009ENX vs R6009END3TL1

 
PartNumberR6009ENJTLR6009ENXR6009END3TL1
DescriptionMOSFET 10V Drive Nch MOSFETMOSFET 10V Drive Nch MOSFETMOSFET NCH 600V 9A POWER MOSFET
ManufacturerROHM SemiconductorROHM SemiconductorROHM Semiconductor
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleSMD/SMTThrough HoleSMD/SMT
Package / CaseTO-263-3TO-220FP-3TO-252-3
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage600 V600 V600 V
Id Continuous Drain Current9 A9 A9 A
Rds On Drain Source Resistance500 mOhms500 mOhms535 mOhms
Vgs th Gate Source Threshold Voltage2 V2 V2 V
Vgs Gate Source Voltage30 V30 V20 V
Qg Gate Charge23 nC23 nC23 nC
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation94 W48 W94 W
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
PackagingReelReelReel
SeriesSuper Junction-MOS ENSuper Junction-MOS EN-
Transistor Type1 N-Channel1 N-Channel1 N-Channel
BrandROHM SemiconductorROHM SemiconductorROHM Semiconductor
Fall Time30 ns30 ns30 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time35 ns35 ns35 ns
Factory Pack Quantity10005002500
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time75 ns75 ns75 ns
Typical Turn On Delay Time25 ns25 ns25 ns
Part # AliasesR6009ENJR6009ENX-
Unit Weight0.077603 oz0.000353 oz-
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