RF4E070BNTR vs RF4E070BN vs RF4E070GN

 
PartNumberRF4E070BNTRRF4E070BNRF4E070GN
DescriptionMOSFET 4.5V Drive Nch MOSFET
ManufacturerROHM Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseDFN2020-8--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current7 A--
Rds On Drain Source Resistance28.6 mOhms--
Vgs th Gate Source Threshold Voltage2 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge8.9 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation2 W--
ConfigurationSingle--
PackagingReel--
SeriesRF4E070BN--
Transistor Type1 N-Channel--
BrandROHM Semiconductor--
Forward Transconductance Min4 S--
Fall Time5 ns--
Product TypeMOSFET--
Rise Time8 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time23 ns--
Typical Turn On Delay Time6 ns--
Part # AliasesRF4E070BN--
Top