RFD3055LE vs RFD3055LE,F3055L vs RFD3055LEMS

 
PartNumberRFD3055LERFD3055LE,F3055LRFD3055LEMS
DescriptionMOSFET TO-251AA N-Ch Power
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSE--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-251-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage60 V--
Id Continuous Drain Current11 A--
Rds On Drain Source Resistance107 mOhms--
Vgs Gate Source Voltage16 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation38 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingTube--
Height6.3 mm--
Length6.8 mm--
SeriesRFD3055LE--
Transistor Type1 N-Channel--
Width2.5 mm--
BrandON Semiconductor / Fairchild--
Fall Time39 ns--
Product TypeMOSFET--
Rise Time105 ns--
Factory Pack Quantity1800--
SubcategoryMOSFETs--
Typical Turn Off Delay Time22 ns--
Typical Turn On Delay Time8 ns--
Part # AliasesRFD3055LE_NL--
Unit Weight0.012102 oz--
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