PartNumber | RFP2N10L | RFP2N10 | RFP2N12 |
Description | MOSFET TO-220AB N-Ch Power | Power Field-Effect Transistor, 2A I(D), 100V, 1.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | - Bulk (Alt: RFP2N12) |
Manufacturer | ON Semiconductor | - | - |
Product Category | MOSFET | - | - |
RoHS | N | - | - |
Technology | Si | - | - |
Mounting Style | Through Hole | - | - |
Package / Case | TO-220-3 | - | - |
Number of Channels | 1 Channel | - | - |
Transistor Polarity | N-Channel | - | - |
Vds Drain Source Breakdown Voltage | 100 V | - | - |
Id Continuous Drain Current | 2 A | - | - |
Rds On Drain Source Resistance | 1.05 Ohms | - | - |
Vgs Gate Source Voltage | 10 V | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Pd Power Dissipation | 25 W | - | - |
Configuration | Single | - | - |
Channel Mode | Enhancement | - | - |
Height | 16.3 mm | - | - |
Length | 10.67 mm | - | - |
Transistor Type | 1 N-Channel | - | - |
Width | 4.7 mm | - | - |
Brand | ON Semiconductor / Fairchild | - | - |
Fall Time | 20 ns | - | - |
Product Type | MOSFET | - | - |
Rise Time | 15 ns | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 25 ns | - | - |
Typical Turn On Delay Time | 10 ns | - | - |
Unit Weight | 0.090478 oz | - | - |