RGCL80TK60DGC11 vs RGCL80TK60 vs RGCL80TK60D

 
PartNumberRGCL80TK60DGC11RGCL80TK60RGCL80TK60D
DescriptionIGBT Transistors IGBT HIGH VOLT AND CURRENT AP
ManufacturerROHM Semiconductor--
Product CategoryIGBT Transistors--
RoHSY--
TechnologySi--
Package / CaseTO-3PFM--
Mounting StyleThrough Hole--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max600 V--
Collector Emitter Saturation Voltage1.4 V--
Maximum Gate Emitter Voltage30 V--
Continuous Collector Current at 25 C35 A--
Pd Power Dissipation57 W--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 175 C--
PackagingTube--
BrandROHM Semiconductor--
Gate Emitter Leakage Current200 nA--
Product TypeIGBT Transistors--
Factory Pack Quantity30--
SubcategoryIGBTs--
Part # AliasesRGCL80TK60D--
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