RN1610(TE85L,F) vs RN1610(TE85LF)CT-ND vs RN1610(TE85L

 
PartNumberRN1610(TE85L,F)RN1610(TE85LF)CT-NDRN1610(TE85L
DescriptionBipolar Transistors - Pre-Biased SM6 PLN (LF) TRANSISTOR Pd 300mW F 250MHz
ManufacturerToshiba-Toshiba Semiconductor and Storage
Product CategoryBipolar Transistors - Pre-Biased-Transistors (BJT) - Arrays, Pre-Biased
ConfigurationDual--
Transistor PolarityNPN--
Typical Input Resistor4.7 kOhms--
Mounting StyleSMD/SMT--
Package / CaseSM-6--
DC Collector/Base Gain hfe Min120--
Collector Emitter Voltage VCEO Max50 V--
Continuous Collector Current100 mA--
Peak DC Collector Current100 mA--
Pd Power Dissipation300 mW--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
PackagingReel-Digi-ReelR Alternate Packaging
Emitter Base Voltage VEBO5 C--
BrandToshiba--
Channel ModeEnhancement--
Maximum DC Collector Current100 mA--
Product TypeBJTs - Bipolar Transistors - Pre-Biased--
Factory Pack Quantity3000--
SubcategoryTransistors--
Series---
Package Case--SC-74, SOT-457
Mounting Type--Surface Mount
Supplier Device Package--SM6
Power Max--300mW
Transistor Type--2 NPN - Pre-Biased (Dual)
Current Collector Ic Max--100mA
Voltage Collector Emitter Breakdown Max--50V
Resistor Base R1 Ohms--4.7k
Resistor Emitter Base R2 Ohms---
DC Current Gain hFE Min Ic Vce--120 @ 1mA, 5V
Vce Saturation Max Ib Ic--300mV @ 250μA, 5mA
Current Collector Cutoff Max--100nA (ICBO)
Frequency Transition--250MHz
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