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| PartNumber | RQ1C075UNTR | RQ1C075UN | RQ1C075UNFRATR |
| Description | MOSFET 1.5V Drive Nch MOSFET | MOSFET, AEC-Q101, N-CH, 20V, TSMT, Transistor Polarity:N Channel, Continuous Drain Current Id:7.5A, Drain Source Voltage Vds:20V, On Resistance Rds(on):0.011ohm, Rds(on) Test Voltage Vgs:4.5V, T | |
| Manufacturer | ROHM Semiconductor | ROHM Semiconductor | - |
| Product Category | MOSFET | Transistors - FETs, MOSFETs - Single | - |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TSMT-8 | - | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 20 V | - | - |
| Id Continuous Drain Current | 7.5 A | - | - |
| Rds On Drain Source Resistance | 40 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 300 mV | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Qg Gate Charge | 18 nC | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 1.5 W | - | - |
| Configuration | Single | 1 N-Channel ESD | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Reel | Reel | - |
| Height | 0.85 mm | - | - |
| Length | 3 mm | - | - |
| Product | MOSFET | - | - |
| Transistor Type | 1 N-channel | 1 N-Channel | - |
| Type | Power MOSFET | - | - |
| Width | 2.4 mm | - | - |
| Brand | ROHM Semiconductor | - | - |
| Forward Transconductance Min | 7 S | - | - |
| Fall Time | 85 ns | 85 ns | - |
| Product Type | MOSFET | - | - |
| Rise Time | 50 ns | 50 ns | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 100 ns | 100 ns | - |
| Typical Turn On Delay Time | 15 ns | 15 ns | - |
| Part # Aliases | RQ1C075UN | - | - |
| Series | - | RQ1C075UN | - |
| Package Case | - | TSMT-8 | - |
| Pd Power Dissipation | - | 1.5 W | - |
| Vgs Gate Source Voltage | - | +/- 10 V | - |
| Id Continuous Drain Current | - | 7.5 A | - |
| Vds Drain Source Breakdown Voltage | - | 20 V | - |
| Vgs th Gate Source Threshold Voltage | - | 300 mV | - |
| Rds On Drain Source Resistance | - | 40 mOhms | - |
| Qg Gate Charge | - | 18 nC | - |
| Forward Transconductance Min | - | 7 S | - |