RQ1E050RPTR vs RQ1E050RP vs RQ1E070RP

 
PartNumberRQ1E050RPTRRQ1E050RPRQ1E070RP
DescriptionMOSFET RECOMMENDED ALT 755-RF4E075ATTCR
ManufacturerROHM SemiconductorROHM SemiconductorROHM Semiconductor
Product CategoryMOSFETTransistors - FETs, MOSFETs - SingleTransistors - FETs, MOSFETs - Single
RoHSY--
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTSMT-8--
Number of Channels1 Channel1 Channel-
Transistor PolarityP-ChannelP-Channel-
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current5 A--
Rds On Drain Source Resistance31 mOhms--
Vgs th Gate Source Threshold Voltage4 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge120 nC--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation1.5 W--
ConfigurationSingle1 N-Channel-
Channel ModeEnhancementEnhancement-
PackagingReelReelReel
Transistor Type1 N-Channel1 N-Channel-
BrandROHM Semiconductor--
Forward Transconductance Min---
Development Kit---
Fall Time50 ns50 ns-
Product TypeMOSFET--
Rise Time15 ns15 ns-
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time90 ns90 ns-
Typical Turn On Delay Time10 ns10 ns-
Part # AliasesRQ1E050RP--
Series-RQ1E050RPRQ1E070RP
Package Case-TSMT8-
Pd Power Dissipation-1.5 W-
Vgs Gate Source Voltage-20 V-
Id Continuous Drain Current-5 A-
Vds Drain Source Breakdown Voltage-- 30 V-
Vgs th Gate Source Threshold Voltage-4 V-
Rds On Drain Source Resistance-31 mOhms-
Qg Gate Charge-120 nC-
Forward Transconductance Min---
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