RQ1E070RPTR vs RQ1E070RP vs RQ1E075VN

 
PartNumberRQ1E070RPTRRQ1E070RPRQ1E075VN
DescriptionMOSFET MID PWR MOSFET SER
ManufacturerROHM SemiconductorROHM Semiconductor-
Product CategoryMOSFETTransistors - FETs, MOSFETs - Single-
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMT--
Package / CaseTSMT-8--
Number of Channels1 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current7 A--
Rds On Drain Source Resistance12 mOhms--
Vgs th Gate Source Threshold Voltage2.5 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge50 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation1.5 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReelReel-
Transistor Type1 P-Channel--
BrandROHM Semiconductor--
Forward Transconductance Min6 S--
Fall Time70 ns--
Product TypeMOSFET--
Rise Time35 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time140 ns--
Typical Turn On Delay Time16 ns--
Part # AliasesRQ1E070RP--
Series-RQ1E070RP-
Top