RS1P600BETB1 vs RS1PB-E3/84A vs RS1P

 
PartNumberRS1P600BETB1RS1PB-E3/84ARS1P
DescriptionMOSFET Nch 100V 60A HSOP8DIODE GEN PURP 100V 1A DO220AA
ManufacturerROHM Semiconductor-VISHAY
Product CategoryMOSFET-IC Chips
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseHSOP-8--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current60 A--
Rds On Drain Source Resistance9.7 mOhms--
Vgs th Gate Source Threshold Voltage2 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge33 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation35 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Transistor Type1 N-Channel--
BrandROHM Semiconductor--
Forward Transconductance Min11 S--
Fall Time17 ns--
Product TypeMOSFET--
Rise Time13 ns--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time44 ns--
Typical Turn On Delay Time33 ns--
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