RSD050N10TL vs RSD050N10 vs RSD050N10FRA

 
PartNumberRSD050N10TLRSD050N10RSD050N10FRA
DescriptionMOSFET RECOMMENDED ALT 755-RD3P050SNTL1
ManufacturerROHM Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-252-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current5 A--
Rds On Drain Source Resistance145 mOhms--
Vgs th Gate Source Threshold Voltage2.5 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge14 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation15 W--
ConfigurationSingle--
PackagingReel--
SeriesRSD050N10--
Transistor Type1 N-Channel--
BrandROHM Semiconductor--
Forward Transconductance Min2.5 S--
Fall Time15 ns--
Product TypeMOSFET--
Rise Time15 ns--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time45 ns--
Typical Turn On Delay Time10 ns--
Part # AliasesRSD050N10--
Unit Weight0.139332 oz--
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