RT1C060UNTR vs RT1C060UN vs RT1C060UNTL

 
PartNumberRT1C060UNTRRT1C060UNRT1C060UNTL
DescriptionMOSFET 1.5V Drive Nch MOSFET
ManufacturerROHM Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTSST-8--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage20 V--
Id Continuous Drain Current6 A--
Rds On Drain Source Resistance20 mOhms--
Vgs th Gate Source Threshold Voltage300 mV--
Vgs Gate Source Voltage10 V--
Qg Gate Charge11 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation1.25 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
SeriesRT1C060UN--
Transistor Type1 N-Channel--
BrandROHM Semiconductor--
Forward Transconductance Min5.5 S--
Fall Time20 ns--
Product TypeMOSFET--
Rise Time30 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time75 ns--
Typical Turn On Delay Time7 ns--
Part # AliasesRT1C060UN--
Top