RUC002N05T116 vs RUC002N05 vs RUC002N05 GZ T116

 
PartNumberRUC002N05T116RUC002N05RUC002N05 GZ T116
DescriptionMOSFET Ultra Lo Vtg 1.2V drive Nch MOSFET
ManufacturerROHM Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSOT-23-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage50 V--
Id Continuous Drain Current200 mA--
Rds On Drain Source Resistance2.2 Ohms--
Vgs th Gate Source Threshold Voltage300 mV--
Vgs Gate Source Voltage4.5 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation350 mW--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
SeriesRUC002N05--
Transistor Type1 N-Channel MOSFET--
BrandROHM Semiconductor--
Fall Time55 ns--
Product TypeMOSFET--
Rise Time6 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time15 ns--
Typical Turn On Delay Time4 ns--
Part # AliasesRUC002N05--
Unit Weight0.000282 oz--
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