SBC856BLT3G vs SBC856BLT1G vs SBC856BLT3

 
PartNumberSBC856BLT3GSBC856BLT1GSBC856BLT3
DescriptionBipolar Transistors - Pre-Biased SS GP XSTR SPCL TRBipolar Transistors - Pre-Biased SS GP XSTR SPCL TR- Bulk (Alt: SBC856BLT3)
ManufacturerON SemiconductorON SemiconductorON Semiconductor
Product CategoryBipolar Transistors - Pre-BiasedBipolar Transistors - Pre-BiasedTransistors (BJT) - Single, Pre-Biased
RoHSYY-
ConfigurationSingleSingleSingle
Transistor PolarityPNPPNPPNP
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseSOT-23-3SOT-23-3-
DC Collector/Base Gain hfe Min220220-
Maximum Operating Frequency100 MHz100 MHz100 MHz
Collector Emitter Voltage VCEO Max65 V65 V-
Continuous Collector Current0.1 A0.1 A0.1 A
Pd Power Dissipation300 mW300 mW-
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
SeriesBC856BLBC856BLBC856BL
PackagingReelReelReel
Collector Base Voltage VCBO80 V80 V-
Emitter Base Voltage VEBO5 V--
Height0.94 mm0.94 mm-
Length2.9 mm2.9 mm-
Width1.3 mm1.3 mm-
BrandON SemiconductorON Semiconductor-
Product TypeBJTs - Bipolar Transistors - Pre-BiasedBJTs - Bipolar Transistors - Pre-Biased-
QualificationAEC-Q101AEC-Q101-
Factory Pack Quantity100003000-
SubcategoryTransistorsTransistors-
Unit Weight0.000282 oz0.000282 oz0.050717 oz
Package Case--SOT-23-3
Pd Power Dissipation--300 mW
Collector Emitter Voltage VCEO Max--65 V
Emitter Base Voltage VEBO--5 V
DC Collector Base Gain hfe Min--220
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