PartNumber | SGH23N60UFDTU | SGH23N60UFDTU,G23N60RUFD | SGH23N60UFDTU,G23N60RUFD,SGH23N60UFD |
Description | IGBT Transistors Dis High Perf IGBT | ||
Manufacturer | ON Semiconductor | - | - |
Product Category | IGBT Transistors | - | - |
RoHS | Y | - | - |
Technology | Si | - | - |
Package / Case | TO-3P-3 | - | - |
Mounting Style | Through Hole | - | - |
Configuration | Single | - | - |
Collector Emitter Voltage VCEO Max | 600 V | - | - |
Collector Emitter Saturation Voltage | 2.1 V | - | - |
Maximum Gate Emitter Voltage | 20 V | - | - |
Continuous Collector Current at 25 C | 23 A | - | - |
Pd Power Dissipation | 100 W | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Series | SGH23N60UFD | - | - |
Packaging | Tube | - | - |
Continuous Collector Current Ic Max | 23 A | - | - |
Height | 18.9 mm | - | - |
Length | 15.8 mm | - | - |
Width | 5 mm | - | - |
Brand | ON Semiconductor / Fairchild | - | - |
Continuous Collector Current | 23 A | - | - |
Gate Emitter Leakage Current | +/- 100 nA | - | - |
Product Type | IGBT Transistors | - | - |
Factory Pack Quantity | 30 | - | - |
Subcategory | IGBTs | - | - |
Part # Aliases | SGH23N60UFDTU_NL | - | - |
Unit Weight | 0.225789 oz | - | - |