SI1416EDH-T1-GE3 vs SI1416EDH-T1-E3 vs SI1416EDH-T1-GE3-CUT TAPE

 
PartNumberSI1416EDH-T1-GE3SI1416EDH-T1-E3SI1416EDH-T1-GE3-CUT TAPE
DescriptionMOSFET 30V Vds 12V Vgs SC70-6
ManufacturerVishay--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSOT-363-6--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current3.9 A--
Rds On Drain Source Resistance58 mOhms--
Vgs th Gate Source Threshold Voltage600 mV--
Vgs Gate Source Voltage10 V--
Qg Gate Charge12 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation2.8 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameTrenchFET--
PackagingReel--
SeriesSI1--
Transistor Type1 N-Channel--
BrandVishay / Siliconix--
Forward Transconductance Min13 S--
Fall Time50 ns--
Product TypeMOSFET--
Rise Time30 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time15 ns--
Typical Turn On Delay Time1.5 ns--
Part # AliasesSI1410EDH-T1-E3-S SI1410EDH-T1-GE3 SI1426DH-T1-E3-S--
Unit Weight0.000988 oz--
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