SI1913EDH-T1-E3 vs SI1913EDH-T1 vs SI1913EDH-T1-GE3

 
PartNumberSI1913EDH-T1-E3SI1913EDH-T1SI1913EDH-T1-GE3
DescriptionMOSFET RECOMMENDED ALT 781-SI1967DH-T1-GE3MOSFET RECOMMENDED ALT 781-SI1967DH-T1-GE3
ManufacturerVishayVishay Siliconix-
Product CategoryMOSFETFETs - Arrays-
RoHSY--
TechnologySi--
TradenameTrenchFET--
PackagingReelDigi-ReelR-
SeriesSI1TrenchFETR-
BrandVishay / Siliconix--
Product TypeMOSFET--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Part # AliasesSI1913EDH-E3--
Unit Weight0.000265 oz--
Package Case-6-TSSOP, SC-88, SOT-363-
Operating Temperature--55°C ~ 150°C (TJ)-
Mounting Type-Surface Mount-
Supplier Device Package-SC-70-6 (SOT-363)-
FET Type-2 P-Channel (Dual)-
Power Max-570mW-
Drain to Source Voltage Vdss-20V-
Input Capacitance Ciss Vds---
FET Feature-Logic Level Gate-
Current Continuous Drain Id 25°C-880mA-
Rds On Max Id Vgs-490 mOhm @ 880mA, 4.5V-
Vgs th Max Id-450mV @ 100μA-
Gate Charge Qg Vgs-1.8nC @ 4.5V-
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