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| PartNumber | SI1926DL-T1-GE3 | SI1926DL-T1-E3 | SI1926DY |
| Description | MOSFET 60V Vds 20V Vgs SC70-6 | MOSFET 60V Vds 20V Vgs SC70-6 | |
| Manufacturer | Vishay | Vishay | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SOT-363-6 | SOT-363-6 | - |
| Number of Channels | 2 Channel | 2 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 60 V | 60 V | - |
| Id Continuous Drain Current | 370 mA | 370 mA | - |
| Rds On Drain Source Resistance | 1.4 Ohms | 1.4 Ohms | - |
| Vgs th Gate Source Threshold Voltage | 1 V | 1 V | - |
| Vgs Gate Source Voltage | 20 V | 10 V | - |
| Qg Gate Charge | 1.4 nC | 0.9 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 510 mW | 510 mW | - |
| Configuration | Dual | Dual | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | TrenchFET | TrenchFET | - |
| Packaging | Reel | Reel | - |
| Height | 1 mm | 1 mm | - |
| Length | 2.1 mm | 2.1 mm | - |
| Series | SI1 | SI1 | - |
| Transistor Type | 2 N-Channel | 2 N-Channel | - |
| Width | 1.25 mm | 1.25 mm | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | - |
| Forward Transconductance Min | 159 ms | 159 mS | - |
| Fall Time | 14 ns | 14 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 12 ns | 12 ns | - |
| Factory Pack Quantity | 3000 | 3000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 13 ns | 13 ns | - |
| Typical Turn On Delay Time | 6.5 ns | 6.5 ns | - |
| Unit Weight | 0.000265 oz | 0.000265 oz | - |
| Part # Aliases | - | SI1926DL-E3 | - |