SI2377EDS-T1-GE3 vs SI2377EDS-T1-E3 vs SI2377EDS-T1-GE3-CUT TAPE

 
PartNumberSI2377EDS-T1-GE3SI2377EDS-T1-E3SI2377EDS-T1-GE3-CUT TAPE
DescriptionMOSFET -20V Vds 8V Vgs SOT-23
ManufacturerVishay--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSOT-23-3--
Number of Channels1 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage20 V--
Id Continuous Drain Current4.4 A--
Rds On Drain Source Resistance61 mOhms--
Vgs th Gate Source Threshold Voltage400 mV--
Vgs Gate Source Voltage4.5 V--
Qg Gate Charge14 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation1.8 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameTrenchFET--
PackagingReel--
Height1.45 mm--
Length2.9 mm--
SeriesSI2--
Transistor Type1 P-Channel--
Width1.6 mm--
BrandVishay / Siliconix--
Forward Transconductance Min12 S--
Fall Time2 ns--
Product TypeMOSFET--
Rise Time1 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time4 ns--
Typical Turn On Delay Time0.2 ns--
Part # AliasesSI2377EDS-GE3--
Unit Weight0.000282 oz--
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