SI4925BDY-T1-E3 vs SI4925BDY-T1-E3-CUT TAPE vs SI4925BDY-T1

 
PartNumberSI4925BDY-T1-E3SI4925BDY-T1-E3-CUT TAPESI4925BDY-T1
DescriptionMOSFET 30 Volt 7.1 Amp 2.0WMOSFET Transistor, Matched Pair, P-Channel, SO
ManufacturerVishay--
Product CategoryMOSFET--
RoHSE--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSO-8--
Number of Channels2 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current7.1 A--
Rds On Drain Source Resistance25 mOhms--
Vgs th Gate Source Threshold Voltage1 V--
Vgs Gate Source Voltage10 V--
Qg Gate Charge33 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation2 W--
ConfigurationDual--
Channel ModeEnhancement--
TradenameTrenchFET--
PackagingReel--
Height1.75 mm--
Length4.9 mm--
SeriesSI4--
Transistor Type2 P-Channel--
Width3.9 mm--
BrandVishay / Siliconix--
Forward Transconductance Min20 S--
Fall Time34 ns--
Product TypeMOSFET--
Rise Time12 ns--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time60 ns--
Typical Turn On Delay Time9 ns--
Part # AliasesSI4925BDY-T1--
Unit Weight0.006596 oz--
Top