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| PartNumber | SI4943CDY-T1-E3 | SI4943CDY-T1-GE3 | SI4943CDY-T1-E3-S |
| Description | MOSFET -20V Vds 20V Vgs SO-8 | MOSFET -20V Vds 20V Vgs SO-8 | |
| Manufacturer | Vishay | Vishay | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | E | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SO-8 | SO-8 | - |
| Number of Channels | 2 Channel | - | - |
| Transistor Polarity | P-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 20 V | - | - |
| Id Continuous Drain Current | 8 A | - | - |
| Rds On Drain Source Resistance | 19.2 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 62 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 3.1 W | - | - |
| Configuration | Dual | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | TrenchFET | TrenchFET | - |
| Packaging | Reel | Reel | - |
| Series | SI4 | SI4 | - |
| Transistor Type | 2 P-Channel | - | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | - |
| Forward Transconductance Min | 19 S | - | - |
| Fall Time | 15 ns | - | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 71 ns | - | - |
| Factory Pack Quantity | 2500 | 2500 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 29 ns | - | - |
| Typical Turn On Delay Time | 50 ns | - | - |
| Part # Aliases | SI4943CDY-E3 | SI4943CDY-GE3 | - |
| Unit Weight | 0.006596 oz | 0.006596 oz | - |
| Height | - | 1.75 mm | - |
| Length | - | 4.9 mm | - |
| Width | - | 3.9 mm | - |