SI7615DN-T1-GE3 vs SI7615DN-T1 vs SI7615DN-T1-E3

 
PartNumberSI7615DN-T1-GE3SI7615DN-T1SI7615DN-T1-E3
DescriptionMOSFET RECOMMENDED ALT 78-SI7615ADN-T1-GE3
ManufacturerVishay--
Product CategoryMOSFET--
RoHSE--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CasePowerPAK-1212-8--
Number of Channels1 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage20 V--
Id Continuous Drain Current35 A--
Rds On Drain Source Resistance3.1 mOhms--
Vgs th Gate Source Threshold Voltage1.5 V--
Vgs Gate Source Voltage12 V--
Qg Gate Charge183 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation52 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameTrenchFET--
PackagingReel--
Height1.04 mm--
Length3.3 mm--
SeriesSI7--
Transistor Type1 P-Channel--
Width3.3 mm--
BrandVishay / Siliconix--
Forward Transconductance Min70 S--
Fall Time28 ns--
Product TypeMOSFET--
Rise Time38 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time75 ns--
Typical Turn On Delay Time35 ns--
Part # AliasesSI7615DN-GE3--
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