SI9407BDY-T1-E3 vs SI9407BDY-T1 vs SI9407BDY-T1-GE

 
PartNumberSI9407BDY-T1-E3SI9407BDY-T1SI9407BDY-T1-GE
DescriptionMOSFET -60V Vds 20V Vgs SO-8
ManufacturerVishay--
Product CategoryMOSFET--
RoHSE--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSO-8--
Number of Channels1 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage60 V--
Id Continuous Drain Current4.7 A--
Rds On Drain Source Resistance100 mOhms--
Vgs th Gate Source Threshold Voltage1 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge14.5 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation5 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameTrenchFET--
PackagingReel--
SeriesSI9--
BrandVishay / Siliconix--
Product TypeMOSFET--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Part # AliasesSI9407BDY-E3--
Unit Weight0.017870 oz--
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