PartNumber | SI9433BDY-T1 | SI9433BDY-T1 SOP8 | SI9433BDY-T1-E |
Description | MOSFET 20V 6.2A 2.3W | ||
Manufacturer | - | - | Vishay Siliconix |
Product Category | - | - | FETs - Single |
Series | - | - | - |
Packaging | - | - | Digi-ReelR Alternate Packaging |
Part Aliases | - | - | SI9433BDY-E3 |
Unit Weight | - | - | 0.017870 oz |
Mounting Style | - | - | SMD/SMT |
Tradename | - | - | TrenchFET/PowerPAK |
Package Case | - | - | 8-SOIC (0.154", 3.90mm Width) |
Technology | - | - | Si |
Operating Temperature | - | - | -55°C ~ 150°C (TJ) |
Mounting Type | - | - | Surface Mount |
Number of Channels | - | - | 1 Channel |
Supplier Device Package | - | - | 8-SO |
Configuration | - | - | Single |
FET Type | - | - | MOSFET P-Channel, Metal Oxide |
Power Max | - | - | 1.3W |
Transistor Type | - | - | 1 P-Channel |
Drain to Source Voltage Vdss | - | - | 20V |
Input Capacitance Ciss Vds | - | - | - |
FET Feature | - | - | Standard |
Current Continuous Drain Id 25°C | - | - | 4.5A (Ta) |
Rds On Max Id Vgs | - | - | 40 mOhm @ 6.2A, 4.5V |
Vgs th Max Id | - | - | 1.5V @ 250μA |
Gate Charge Qg Vgs | - | - | 14nC @ 4.5V |
Pd Power Dissipation | - | - | 1.3 W |
Maximum Operating Temperature | - | - | + 150 C |
Minimum Operating Temperature | - | - | - 55 C |
Fall Time | - | - | 55 ns |
Rise Time | - | - | 55 ns |
Vgs Gate Source Voltage | - | - | 12 V |
Id Continuous Drain Current | - | - | 4.5 A |
Vds Drain Source Breakdown Voltage | - | - | - 20 V |
Rds On Drain Source Resistance | - | - | 40 mOhms |
Transistor Polarity | - | - | P-Channel |
Typical Turn Off Delay Time | - | - | 65 ns |
Typical Turn On Delay Time | - | - | 40 ns |
Forward Transconductance Min | - | - | 15 S |
Channel Mode | - | - | Enhancement |