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| PartNumber | SIA519EDJ-T1-GE3 | SIA519EDJ | SIA519EDJ-T1 |
| Description | MOSFET -20V Vds 12V Vgs PowerPAK SC-70 | ||
| Manufacturer | Vishay | - | |
| Product Category | MOSFET | - | FETs - Arrays |
| RoHS | Y | - | - |
| Technology | Si | - | Si |
| Mounting Style | SMD/SMT | - | SMD/SMT |
| Package / Case | PowerPAK-SC70-6 | - | - |
| Number of Channels | 2 Channel | - | 2 Channel |
| Transistor Polarity | N-Channel, P-Channel | - | N-Channel P-Channel |
| Vds Drain Source Breakdown Voltage | 20 V | - | - |
| Id Continuous Drain Current | 4.5 A | - | - |
| Rds On Drain Source Resistance | 40 mOhms, 90 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 600 mV, 500 mV | - | - |
| Vgs Gate Source Voltage | 4.5 V | - | - |
| Qg Gate Charge | 3.7 nC, 5.3 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Maximum Operating Temperature | + 150 C | - | + 150 C |
| Pd Power Dissipation | 7.8 W | - | - |
| Configuration | Dual | - | 1 N-Channel 1 P-Channel |
| Channel Mode | Enhancement | - | - |
| Tradename | TrenchFET, PowerPAK | - | - |
| Packaging | Reel | - | Digi-ReelR Alternate Packaging |
| Height | 0.75 mm | - | - |
| Length | 2.05 mm | - | - |
| Series | SIA | - | TrenchFETR |
| Transistor Type | 1 N-Channel, 1 P-Channel | - | 1 N-Channel 1 P-Channel |
| Width | 2.05 mm | - | - |
| Brand | Vishay / Siliconix | - | - |
| Forward Transconductance Min | 12 S, 7 S | - | - |
| Fall Time | 16 ns, 10 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 21 ns, 25 ns | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 12 ns, 20 ns | - | - |
| Typical Turn On Delay Time | 10 ns, 20 ns | - | - |
| Part # Aliases | SIA519EDJ-GE3 | - | - |
| Unit Weight | 0.000988 oz | - | 0.000988 oz |
| Part Aliases | - | - | SIA519EDJ-GE3 |
| Package Case | - | - | PowerPAKR SC-70-6 Dual |
| Operating Temperature | - | - | -55°C ~ 150°C (TJ) |
| Mounting Type | - | - | Surface Mount |
| Supplier Device Package | - | - | PowerPAKR SC-70-6 Dual |
| FET Type | - | - | N and P-Channel |
| Power Max | - | - | 7.8W |
| Drain to Source Voltage Vdss | - | - | 20V |
| Input Capacitance Ciss Vds | - | - | 350pF @ 10V |
| FET Feature | - | - | Logic Level Gate |
| Current Continuous Drain Id 25°C | - | - | 4.5A |
| Rds On Max Id Vgs | - | - | 40 mOhm @ 4.2A, 4.5V |
| Vgs th Max Id | - | - | 1.4V @ 250μA |
| Gate Charge Qg Vgs | - | - | 12nC @ 10V |
| Pd Power Dissipation | - | - | 7.8 W |
| Id Continuous Drain Current | - | - | 4.5 A |
| Vds Drain Source Breakdown Voltage | - | - | 20 V |
| Rds On Drain Source Resistance | - | - | 33 mOhms 74 mOhms |
| Qg Gate Charge | - | - | 7.7 nC 10.5 nC |
| Forward Transconductance Min | - | - | 7 S 12 S |