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| PartNumber | SIA911ADJ-T1-GE3 | SIA910EDJ-T1-GE3 | SIA910EDJ-T1-GE3-CUT TAPE |
| Description | MOSFET 20V 4.5A 6.5W | MOSFET 12V Vds 8V Vgs PowerPAK SC-70 | |
| Manufacturer | Vishay | Vishay | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Tradename | TrenchFET, PowerPAK | TrenchFET, PowerPAK | - |
| Packaging | Reel | Reel | - |
| Series | SIA | SIA | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | - |
| Product Type | MOSFET | MOSFET | - |
| Factory Pack Quantity | 3000 | 3000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Part # Aliases | SIA911ADJ-GE3 | SIA910EDJ-GE3 | - |
| Unit Weight | 0.000988 oz | 0.000988 oz | - |
| Mounting Style | - | SMD/SMT | - |
| Package / Case | - | PowerPAK-SC70-6 | - |
| Number of Channels | - | 2 Channel | - |
| Transistor Polarity | - | N-Channel | - |
| Vds Drain Source Breakdown Voltage | - | 12 V | - |
| Id Continuous Drain Current | - | 4.5 A | - |
| Rds On Drain Source Resistance | - | 28 mOhms | - |
| Vgs th Gate Source Threshold Voltage | - | 400 mV | - |
| Vgs Gate Source Voltage | - | 8 V | - |
| Qg Gate Charge | - | 16 nC | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Pd Power Dissipation | - | 7.8 W | - |
| Configuration | - | Dual | - |
| Channel Mode | - | Enhancement | - |
| Height | - | 0.75 mm | - |
| Length | - | 2.05 mm | - |
| Transistor Type | - | 2 N-Channel | - |
| Width | - | 2.05 mm | - |
| Forward Transconductance Min | - | 23 S | - |
| Fall Time | - | 12 ns | - |
| Rise Time | - | 12 ns | - |
| Typical Turn Off Delay Time | - | 25 ns | - |
| Typical Turn On Delay Time | - | 10 ns | - |