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| PartNumber | SIHP100N60E-GE3 | SIHP105N60EF-GE3 | SIHP10N40D |
| Description | MOSFET 650V Vds; 30V Vgs TO-220AB | MOSFET EF Series Power MOSFET With Fast Body Diode | |
| Manufacturer | Vishay | Vishay | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-220AB-3 | TO-220AB-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 600 V | 600 V | - |
| Id Continuous Drain Current | 30 A | 29 A | - |
| Rds On Drain Source Resistance | 100 mOhms | 88 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 3 V | 5 V | - |
| Vgs Gate Source Voltage | 30 V | 30 V | - |
| Qg Gate Charge | 50 nC | 35 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 208 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Tube | - | - |
| Series | E | EF | - |
| Transistor Type | 1 N-Channel | - | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | - |
| Forward Transconductance Min | 11 S | - | - |
| Fall Time | 20 ns | 19 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 34 ns | 28 ns | - |
| Factory Pack Quantity | 50 | - | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 33 ns | 39 ns | - |
| Typical Turn On Delay Time | 21 ns | 20 ns | - |
| Tradename | - | TrenchFET | - |