SIHP33N60E-GE3 vs SIHP33N60EF-GE3 vs SIHP33N60E

 
PartNumberSIHP33N60E-GE3SIHP33N60EF-GE3SIHP33N60E
DescriptionMOSFET 600V Vds 30V Vgs TO-220ABMOSFET 600V Vds 30V Vgs TO-220AB
ManufacturerVishayVishay-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-220AB-3TO-220AB-3-
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage600 V--
Id Continuous Drain Current33 A--
Rds On Drain Source Resistance99 mOhms--
Vgs th Gate Source Threshold Voltage4 V--
Vgs Gate Source Voltage30 V--
Qg Gate Charge100 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation278 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingTubeTube-
Height15.49 mm--
Length10.41 mm--
SeriesEEF-
Width4.7 mm--
BrandVishay / SiliconixVishay / Siliconix-
Fall Time54 ns--
Product TypeMOSFETMOSFET-
Rise Time60 ns--
Factory Pack Quantity5050-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time99 ns--
Typical Turn On Delay Time28 ns--
Unit Weight0.211644 oz0.211644 oz-
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