SIHW47N60EF-GE3 vs SIHW47N60E-GE3 vs SIHW47N60E

 
PartNumberSIHW47N60EF-GE3SIHW47N60E-GE3SIHW47N60E
DescriptionMOSFET RECOMMENDED ALT 78-SIHG47N60EF-GE3MOSFET 600V Vds 30V Vgs TO-247AD
ManufacturerVishayVishay-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
PackagingBulkTube-
SeriesEFE-
BrandVishay / SiliconixVishay / Siliconix-
Product TypeMOSFETMOSFET-
Factory Pack Quantity480480-
SubcategoryMOSFETsMOSFETs-
Unit Weight1.340411 oz1.340411 oz-
Mounting Style-Through Hole-
Package / Case-TO-247AD-3-
Number of Channels-1 Channel-
Transistor Polarity-N-Channel-
Vds Drain Source Breakdown Voltage-600 V-
Id Continuous Drain Current-47 A-
Rds On Drain Source Resistance-65 mOhms-
Vgs th Gate Source Threshold Voltage-4 V-
Vgs Gate Source Voltage-30 V-
Qg Gate Charge-152 nC-
Minimum Operating Temperature-- 55 C-
Maximum Operating Temperature-+ 150 C-
Pd Power Dissipation-379 W-
Configuration-Single-
Channel Mode-Enhancement-
Fall Time-56 ns-
Rise Time-56 ns-
Typical Turn Off Delay Time-91 ns-
Typical Turn On Delay Time-30 ns-
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