PartNumber | SIR800ADP-T1-GE3 | SIR800ADP-T1-RE3 | SIR800 |
Description | MOSFET 20V Vds 12V Vgs PowerPAK SO-8 | MOSFET 20V Vds; 12/-8V Vgs PowerPAK SO-8 | |
Manufacturer | Vishay | Vishay | - |
Product Category | MOSFET | MOSFET | - |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | PowerPAK-SO-8 | PowerPAK-SO-8 | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 20 V | 20 V | - |
Id Continuous Drain Current | 177 A | 177 A | - |
Rds On Drain Source Resistance | 1.35 mOhms | 1.35 mOhms | - |
Vgs th Gate Source Threshold Voltage | 600 mV | 0.6 V | - |
Vgs Gate Source Voltage | 12 V, - 8 V | - 8 V, 12 V | - |
Qg Gate Charge | 53 nC | 53 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 62.5 W | 62.5 W | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | Enhancement | - |
Tradename | TrenchFET, PowerPAK | TrenchFET, PowerPAK | - |
Packaging | Reel | Reel | - |
Series | SIR | SIR | - |
Transistor Type | 1 N-Channel TrenchFET Power MOSFET | 1 N-Channel | - |
Brand | Vishay / Siliconix | Vishay / Siliconix | - |
Forward Transconductance Min | 60 S | 60 S | - |
Fall Time | 10 ns | 10 ns | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 13 ns | 13 ns | - |
Factory Pack Quantity | 3000 | 3000 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 40 ns | 40 ns | - |
Typical Turn On Delay Time | 20 ns | 20 ns | - |