SIR800ADP-T1-GE3 vs SIR800ADP-T1-RE3 vs SIR800

 
PartNumberSIR800ADP-T1-GE3SIR800ADP-T1-RE3SIR800
DescriptionMOSFET 20V Vds 12V Vgs PowerPAK SO-8MOSFET 20V Vds; 12/-8V Vgs PowerPAK SO-8
ManufacturerVishayVishay-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CasePowerPAK-SO-8PowerPAK-SO-8-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage20 V20 V-
Id Continuous Drain Current177 A177 A-
Rds On Drain Source Resistance1.35 mOhms1.35 mOhms-
Vgs th Gate Source Threshold Voltage600 mV0.6 V-
Vgs Gate Source Voltage12 V, - 8 V- 8 V, 12 V-
Qg Gate Charge53 nC53 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation62.5 W62.5 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenameTrenchFET, PowerPAKTrenchFET, PowerPAK-
PackagingReelReel-
SeriesSIRSIR-
Transistor Type1 N-Channel TrenchFET Power MOSFET1 N-Channel-
BrandVishay / SiliconixVishay / Siliconix-
Forward Transconductance Min60 S60 S-
Fall Time10 ns10 ns-
Product TypeMOSFETMOSFET-
Rise Time13 ns13 ns-
Factory Pack Quantity30003000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time40 ns40 ns-
Typical Turn On Delay Time20 ns20 ns-
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