SIS407ADN-T1-GE3 vs SIS407 vs SIS407ADN

 
PartNumberSIS407ADN-T1-GE3SIS407SIS407ADN
DescriptionMOSFET -20V Vds 8V Vgs PowerPAK 1212-8
ManufacturerVishay--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CasePowerPAK-1212-8--
Number of Channels1 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage20 V--
Id Continuous Drain Current18 A--
Rds On Drain Source Resistance9 mOhms--
Vgs th Gate Source Threshold Voltage400 mV--
Vgs Gate Source Voltage4.5 V--
Qg Gate Charge112 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation39.1 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameTrenchFET, PowerPAK--
PackagingReel--
Height1.04 mm--
Length3.3 mm--
SeriesSIS--
Transistor Type1 P-Channel--
Width3.3 mm--
BrandVishay / Siliconix--
Forward Transconductance Min70 S--
Fall Time36 ns--
Product TypeMOSFET--
Rise Time4 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time120 ns--
Typical Turn On Delay Time12 ns--
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